| LIST-I | LIST-II | ||
|---|---|---|---|
| A | When it is doped with 2 ppm concentration of a pentavalent atom, \(n_e\) is | I | \(4.0 \times 10^{8}\ \text{m}^{-3}\) |
| B | When it is doped with 2 ppm concentration of a pentavalent atom, \(n_h\) is | II | \(2.5 \times 10^{23}\ \text{m}^{-3}\) |
| C | When it is doped with 5 ppm concentration of a pentavalent atom, \(n_e\) is | III | \(10^{9}\ \text{m}^{-3}\) |
| D | When it is doped with 5 ppm concentration of a pentavalent atom, \(n_h\) is | IV | \(10^{23}\ \text{m}^{-3}\) |
Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.