List of top Physics Questions on Semiconductors asked in CUET (UG)

The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in the semiconductor Ge is: (Given, the band gap of Ge is 0.72 eV)

If the forward bias voltage in a diode is increased, the width of the depletion region

For a heavily doped n-type semi-conductor, donor level lies

Match List-I with List-II. Assume that the Si intrinsic semiconductor has \(5 \times 10^{28}\) atoms/m\(^3\). (Given: the intrinsic concentration of electrons in the semiconductor is \(10^{16}\ \text{m}^{-3}\)).

	LIST-I		LIST-II
A	When it is doped with 2 ppm concentration of a pentavalent atom, \(n_e\) is	I	\(4.0 \times 10^{8}\ \text{m}^{-3}\)
B	When it is doped with 2 ppm concentration of a pentavalent atom, \(n_h\) is	II	\(2.5 \times 10^{23}\ \text{m}^{-3}\)
C	When it is doped with 5 ppm concentration of a pentavalent atom, \(n_e\) is	III	\(10^{9}\ \text{m}^{-3}\)
D	When it is doped with 5 ppm concentration of a pentavalent atom, \(n_h\) is	IV	\(10^{23}\ \text{m}^{-3}\)

Choose the correct answer from the options given below:

Identify the graph from the following showing the temperature dependence of resistivity for a typical semiconductor?

Which of the following statements is NOT correct: