The doping concentration is \( \frac{1}{5 \times 10^7} \) dopant atoms per silicon atom. The number of holes per cubic meter is calculated by multiplying this concentration by the number of silicon atoms per cubic meter: \[ n_{\text{holes}} = \left( \frac{1}{5 \times 10^7} \right) \times (5 \times 10^{28}) = 10^{21} \, \text{holes m}^{-3} \] To express this in holes per cubic centimeter, we convert units: Since \( 1 \, \text{m}^3 = 10^6 \, \text{cm}^3 \): \[ n_{\text{holes}} = \frac{10^{21}}{10^6} = 10^{15} \, \text{holes cm}^{-3} \] Consequently, the doping results in \( 10^{15} \, \text{holes cm}^{-3} \). A common dopant for p-type semiconductors is Boron.