1. Forward Bias Condition: In forward bias (Positive to P-side, Negative to N-side), the external field opposes the internal barrier potential. Once the applied voltage exceeds the "knee voltage" (approx. 0.7V for Silicon), the depletion region narrows significantly, allowing charge carriers to cross the junction easily.
2. Resistance in Forward Bias: Since the current flows very easily in this state, the resistance is very low. It is typically in the range of
1 to 100 ohms ($\Omega$). In an ideal diode model, we often treat this as zero ohms, but in reality, it is a very small ohmic value.
3. Comparison with Reverse Bias: In reverse bias, the depletion region widens, preventing current flow. The resistance in reverse bias is extremely high, often in the range of
Mega-ohms (M$\Omega$).
Because the question asks for "forward biased" resistance, the order of magnitude is the lowest one provided: $\Omega$ (Ohms).