List of top Nanoelectronics Questions on Electronic devices

Semiconductor devices have the following advantages over vacuum tubes :
• [A.] Bigger size
• [B.] More efficient
• [C.] Higher operating voltages
• [D.] No warm-up period
• [E.] More rugged Choose the correct answer from the options given below :

In the active region of transistor amplifier, which of the following options are correct :
• [A.] Base-emitter junction is forward-biased
• [B.] Base-emitter junction is reverse-biased
• [C.] Collector-base junction is forward-biased
• [D.] Collector-base junction is reverse biased Choose the correct answer from the options given below :

Minimum number of NAND gate required to implement the following Boolean expression : \[ X = AB + CD \]

Which of the following is a universal flip-flop ?

Given below are two statements : one is labelled as Assertion (A) and the other is labelled as Reason (R). Assertion (A): The gate of a MOSFET is insulated from body of FET by deposition of a very thin fragile layer of \(SiO_2\) over the substrate. Reason (R): The device is therefore called an insulated gate field-effect transistor (IGFET). In the light of the above statements, choose the most appropriate answer from the options given below :

Given below are two statements : one is labelled as Assertion (A) and the other is labelled as Reason (R). Assertion (A): The body effect in MOSFET causes the threshold voltage \(V_{th}\) to increase as source-body voltage \(V_{SB}\) increases. Reason (R): Increasing \(V_{SB}\) resets the surface potential and therefore reduces the barrier for inversion. In the light of the above statements, choose the most appropriate answer from the options given below :

What is the typical efficiency of half-wave rectifier?

The sequence of physical events when forward bias is applied to PN junction: A. Barrier potential reduces B. Majority carriers injected across junction C. Recombination in neutral regions increases D. Diffusion current established across quasi-neutral regions E. Net forward current increases Choose the correct answer from the options given below :

For the series diode configuration of the given figure, determine \(V_D\) and \(I_D\).

For the given emitter-bias network, determine the values of \(I_C\) and \(V_{CE}\). Assume \(\beta =100\).

Following statements are given in reference to 8085 Microprocessor:
(A) Its memory size is 64 KB
(B) It is a 40-pin IC
(C) Its clock frequency lies between 3 to 5 MHz
(D) It has 16 bit of each data and address lines.
Choose the correct answer from the options given below:

(A) MOV A, C is a one-byte instruction.
(B) OUT 03 H is a two-byte instruction.
(C) ANI 76 H is a three-byte instruction.
(D) STA 3000 H is a three-byte instruction.

(A) Tunnel diode is a heavily doped pn junction diode that exhibits negative differential resistance.
(B) Stability factor (S) is the maximum for a voltage divider bias circuit.
(C) The operational amplifier works as a comparator circuit in open loop configuration.
(D) Biasing is done to set the quiescent point of the transistor in the middle of the DC load line.
Choose the correct statements from the options given below:

............ refers to the inability to faithfully repeat recorded data output when measuring a range of values and scanning from different directions.

Arrange the following devices in increasing order of their input resistances:
(A) MOSFET
(B) BJT
(C) JFET
(D) PN junction diode

........ is the vector address of the TRAP interrupt.

Determine the Y11 and Y12 parameters for the circuit given below: