Question

Given below are two statements : one is labelled as Assertion (A) and the other is labelled as Reason (R). Assertion (A): The gate of a MOSFET is insulated from body of FET by deposition of a very thin fragile layer of \(SiO_2\) over the substrate. Reason (R): The device is therefore called an insulated gate field-effect transistor (IGFET). In the light of the above statements, choose the most appropriate answer from the options given below :

• A. Both (A) and (R) are correct and (R) is the correct explanation of (A)
• B. Both (A) and (R) are correct but (R) is not the correct explanation of (A)
• C. (A) is correct but (R) is not correct
• D. (A) is not correct but (R) is correct

Hint:

MOSFET is also called: \[ \text{IGFET}=\text{Insulated Gate Field Effect Transistor} \] because the gate is insulated from the channel by a thin: \[ SiO_2 \] layer. This gives MOSFETs extremely high input impedance and negligible gate current.

Answer 1

The Correct Option is A