The problem requires determining the maximum light wavelength capable of generating a hole in a p-type semiconductor with an acceptor level at 6 eV. This is achieved by applying the energy-wavelength relationship for photons.
The energy \(E\) of a photon is defined by its wavelength \(\lambda\) through the equation:
\(E = \frac{hc}{\lambda}\)
Where:
Given the constant \(hc = 1242 \, \text{eV nm}\) and the acceptor level energy \(E = 6 \, \text{eV}\), we aim to find the maximum wavelength \(\lambda\) that facilitates energy transitions to this level.
Rearranging the equation to solve for wavelength yields:
\(\lambda = \frac{hc}{E}\)
Substituting the given values:
\(\lambda = \frac{1242 \, \text{eV nm}}{6 \, \text{eV}}\)
The calculation results in:
\(\lambda = 207 \, \text{nm}\)
Consequently, the maximum wavelength of light that can create a hole in this semiconductor is 207 nm.
Justification of the answer:
Therefore, the correct answer is 207 nm.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 

