To find the current gain (\beta) of the n-p-n common emitter (CE) transistor, we use the relationship between the change in collector current and the change in base current. The formula for the current gain, \beta, is given by:
\beta = \frac{\Delta I_{C}}{\Delta I_{B}}
Where:
From the given data, the change in collector current, \Delta I_{C}, is:
\Delta I_{C} = 16 \, \text{mA} - 5 \, \text{mA} = 11 \, \text{mA}
Similarly, the change in base current, \Delta I_{B}, is:
\Delta I_{B} = 200 \, \mu\text{A} - 100 \, \mu\text{A} = 100 \, \mu\text{A}
Converting \Delta I_{B} to milliamperes for consistency:
\Delta I_{B} = 100 \, \mu\text{A} = 0.1 \, \text{mA}
Now, substituting these values into the formula:
\beta = \frac{11 \, \text{mA}}{0.1 \, \text{mA}} = 110
Thus, the current gain of the transistor is 110.
Therefore, the correct answer is 110.
In the circuit shown, the identical transistors Q1 and Q2 are biased in the active region with \( \beta = 120 \). The Zener diode is in the breakdown region with \( V_Z = 5 \, V \) and \( I_Z = 25 \, mA \). If \( I_L = 12 \, mA \) and \( V_{EB1} = V_{EB2} = 0.7 \, V \), then the values of \( R_1 \) and \( R_2 \) (in \( k\Omega \), rounded off to one decimal place) are _________, respectively.

Given below are two statements :
Statement I : In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II : In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.