Full-Wave Rectifier Using P-N Junction Diodes
A full-wave rectifier converts the entire alternating current (AC) input into pulsating direct current (DC), allowing both halves of the AC waveform to contribute to the output. It typically uses four p-n junction diodes arranged in a bridge configuration.
- D1, D2, D3, D4: P-N junction diodes - AC: Alternating current source - RL: Load resistor across which DC is obtained 
Working:
1. Positive Half-Cycle of AC Input:
- During the positive half of the AC input, the current flows through diode D1 → Load resistor RL → D3. - Diodes D2 and D4 remain reverse-biased and do not conduct. - A positive voltage appears across RL.
2. Negative Half-Cycle of AC Input:
- During the negative half of the AC input, the current flows through D2 → Load resistor RL → D4. - Diodes D1 and D3 remain reverse-biased. - The current through RL remains in the same direction, so the output is still positive.
Thus, both halves of the AC input contribute to the output voltage, doubling the frequency of the pulsating DC compared to a half-wave rectifier.
Input-Output Waveforms:
- Input AC waveform:
- Output DC waveform (pulsating):
Summary:
- A full-wave rectifier uses four p-n junction diodes in a bridge configuration. - Both halves of the AC waveform are used, producing a pulsating DC output. - The output frequency is twice the input AC frequency. - Smoother DC can be obtained by adding a filter capacitor across the load resistor RL.
Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.