The band gap energy, represented by \(X\), of the photodiode is determined by the wavelength of light at which its conductivity begins to change, specifically when illuminated with light having a wavelength less than 660 nm.
The relationship between photon energy \(E\) and its wavelength \(\lambda\) is defined by the equation:
\(E = \frac{hc}{\lambda}\)
The constants and values used are:
Substituting these values into the formula yields:
\(E = \frac{6.6 \times 10^{-34} \times 3 \times 10^8}{660 \times 10^{-9}}\)
The calculation proceeds as follows:
\(E = \frac{6.6 \times 3}{660} \times 10^{-34 + 8 + 9} \, \text{eV}\)
Simplification results in:
\(E = \frac{6.6 \times 3}{660} \times 10^{-17} \, \text{eV}\)
\(E = \frac{19.8}{660} \times 10^{-17} \, \text{eV}\)
\(E \approx 3.0 \times 10^{-19} \, \text{J}\)
To convert the energy from joules to electron volts, the conversion factor \(1 \, \text{eV} = 1.6 \times 10^{-19} \, \text{J}\) is applied:
\(E = \frac{3.0 \times 10^{-19}}{1.6 \times 10^{-19}} \, \text{eV}\)
\(E \approx 1.875 \, \text{eV}\)
Given that the band gap \(E_g\) is expressed as \(\frac{X}{8} \, \text{eV}\), we set the calculated energy equal to this expression to solve for \(X\):
\(\frac{X}{8} = 1.875\)
Solving for \(X\):
\(X = 1.875 \times 8 = 15\)
The value of \(X\) is determined to be 15. The correct answer is 15.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 

