Doping a p-type silicon semiconductor introduces holes (positive charge carriers) by replacing silicon atoms with dopant atoms. This section calculates the number of holes generated per cubic centimetre through doping.
The number of dopant atoms per unit volume is found by multiplying the doping concentration by the silicon atom number density:
\[ \text{Number of dopant atoms per unit volume} = \frac{1}{5 \times 10^7} \times 5 \times 10^{28} \, \text{atoms/m}^3 \]
This results in:
\[ = 1 \times 10^{21} \, \text{atoms/m}^3 \]
In a p-type semiconductor, each dopant atom yields one hole. Consequently, the number of holes per cubic metre equals the number of dopant atoms per cubic metre:
\[ \text{Number of holes per cubic metre} = 1 \times 10^{21} \, \text{holes/m}^3 \]
Given that 1 cubic metre equals \( 10^6 \) cubic centimetres, the number of holes per cubic centimetre is calculated as:
\[ \text{Number of holes per cubic centimetre} = \frac{1 \times 10^{21}}{10^6} = 1 \times 10^{15} \, \text{holes/cm}^3 \]
The doping process in the p-type silicon semiconductor results in \( 1 \times 10^{15} \, \text{holes/cm}^3 \).
Boron (B) is a common dopant used to create p-type silicon. Boron has one fewer valence electron than silicon, which creates a hole in the semiconductor lattice.
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