1. The NPN Structure: An NPN transistor consists of a P-type layer (Base) sandwiched between two N-type layers (Emitter and Collector).
2. Biasing the Junctions:
• Emitter-Base (E-B) Junction: This must be
forward biased. For an N-type emitter and P-type base, this means the base must be more positive than the emitter (or the emitter negative with respect to the base).
• Collector-Base (C-B) Junction: This must be
reverse biased. For an N-type collector and P-type base, this means the collector must be more positive than the base.
3. Why this configuration?: Forward biasing the E-B junction allows electrons to flow from the N-type emitter into the P-type base. Because the base is very thin and lightly doped, most of these electrons are then swept across the C-B junction by the strong positive potential on the collector, creating the collector current ($I_C$).
Therefore, the transistor conducts when the collector is positive (relative to the base) and the emitter is negative (relative to the base).