To solve the question of which part of the transistor is heavily doped to produce a large number of majority carriers, let's break down the roles of the various parts of a transistor:
Based on the doping levels and their functions, the emitter is the correct answer, as it is heavily doped to produce a large number of majority carriers for efficient electron or hole injection into the base region.
Other options are incorrect because:
Therefore, the correct answer is the emitter.
In the circuit shown, the identical transistors Q1 and Q2 are biased in the active region with \( \beta = 120 \). The Zener diode is in the breakdown region with \( V_Z = 5 \, V \) and \( I_Z = 25 \, mA \). If \( I_L = 12 \, mA \) and \( V_{EB1} = V_{EB2} = 0.7 \, V \), then the values of \( R_1 \) and \( R_2 \) (in \( k\Omega \), rounded off to one decimal place) are _________, respectively.
