Question:easy
In a transistor, comparing the doping of emitter, base and collector, the part which is heavily doped and that which is lightly doped are respectively
In a transistor, comparing the doping of emitter, base and collector, the part which is heavily doped and that which is lightly doped are respectively
Show Hint
The emitter must supply many carriers, so it is heavily doped, and the base is thin and lightly doped.
Updated On: Oct 1, 2026
- collector and emitter
- emitter and base
- collector and base
- emitter and collector
Show Solution
The Correct Option is B
Solution and Explanation
Step 1: Roles
Emitter: injects carriers. Base: lets carriers pass. Collector: collects them.
Step 2: Doping order
Emitter is the most heavily doped, the collector is moderately doped, and the base is the most lightly doped.
Step 3: Reason for a light base
A lightly doped, thin base reduces recombination, so the collector current is nearly equal to the emitter current.
Step 4: Answer
Heavily doped: emitter. Lightly doped: base. Option (B).
Final Answer:
The emitter is the heavily doped part and the base is the lightly doped part. This is option (B). \[ \boxed{\text{(B) }\text{Emitter and base}} \]
Emitter: injects carriers. Base: lets carriers pass. Collector: collects them.
Step 2: Doping order
Emitter is the most heavily doped, the collector is moderately doped, and the base is the most lightly doped.
Step 3: Reason for a light base
A lightly doped, thin base reduces recombination, so the collector current is nearly equal to the emitter current.
Step 4: Answer
Heavily doped: emitter. Lightly doped: base. Option (B).
Final Answer:
The emitter is the heavily doped part and the base is the lightly doped part. This is option (B). \[ \boxed{\text{(B) }\text{Emitter and base}} \]
Was this answer helpful?
0
Top Questions on Transistors
- A square metal sheet of 4 m \( \times \) 4 m is placed on the x-y plane as shown in the figure below. If the surface charge density (in \( \mu \)C/m\(^2\)) on the sheet is \( \rho_s(x, y) = 4|y| \), then the total charge (in \( \mu \)C, rounded off to the nearest integer) on the sheet is _________.
- GATE EC - 2025
- Networks, Signals and Systems
- Transistors
- The electron mobility \( \mu_n \) in a non-degenerate germanium semiconductor at 300 K is 0.38 m$^2$/Vs. The electron diffusivity \( D_n \) at 300 K (in cm$^2$/s, rounded off to the nearest integer) is _________.
- GATE EC - 2025
- Networks, Signals and Systems
- Transistors
In the circuit shown, the identical transistors Q1 and Q2 are biased in the active region with \( \beta = 120 \). The Zener diode is in the breakdown region with \( V_Z = 5 \, V \) and \( I_Z = 25 \, mA \). If \( I_L = 12 \, mA \) and \( V_{EB1} = V_{EB2} = 0.7 \, V \), then the values of \( R_1 \) and \( R_2 \) (in \( k\Omega \), rounded off to one decimal place) are _________, respectively.
- GATE EC - 2025
- Networks, Signals and Systems
- Transistors
- In an n-p-n common emitter (CE) transistor the collector current changes from 5 m A to 16 mA for the change in base current from 100 μ A and 200 μA , respectively. The current gain of transistor is Options 1. 110 2. 0.9 3. 210 4. 9
- JEE Main - 2023
- Physics
- Transistors
- Want to practice more? Try solving extra ecology questions todayView All Questions