Question:medium
In a transistor amplifier, a change of 0.2 mA in the base current causes a change of 5 mA in the collector current. If input resistance is \(2 \text{k}\Omega\) and voltage gain is 75, the load resistance used in the circuit is
In a transistor amplifier, a change of 0.2 mA in the base current causes a change of 5 mA in the collector current. If input resistance is \(2 \text{k}\Omega\) and voltage gain is 75, the load resistance used in the circuit is
Show Hint
Voltage gain equals current gain times load over input resistance.
Updated On: Oct 1, 2026
- \(4 \text{k}\Omega\)
- \(6 \text{k}\Omega\)
- \(8 \text{k}\Omega\)
- \(2 \text{k}\Omega\)
Show Solution
The Correct Option is B
Solution and Explanation
Step 1: Voltage gain per unit of current gain:
$\dfrac{A_v}{\beta} = \dfrac{75}{25} = 3 = \dfrac{R_L}{R_{in}}$.
Step 2: Solve:
$R_L = 3\times2\ \text{k}\Omega = 6\ \text{k}\Omega$.
Step 3: Result:
Option (B).
Final Answer:
The load resistance is 6 kilo-ohm. \[ \boxed{\text{(B) }6\ \text{k}\Omega} \]
$\dfrac{A_v}{\beta} = \dfrac{75}{25} = 3 = \dfrac{R_L}{R_{in}}$.
Step 2: Solve:
$R_L = 3\times2\ \text{k}\Omega = 6\ \text{k}\Omega$.
Step 3: Result:
Option (B).
Final Answer:
The load resistance is 6 kilo-ohm. \[ \boxed{\text{(B) }6\ \text{k}\Omega} \]
Was this answer helpful?
0
Top Questions on Transistors
- A square metal sheet of 4 m \( \times \) 4 m is placed on the x-y plane as shown in the figure below. If the surface charge density (in \( \mu \)C/m\(^2\)) on the sheet is \( \rho_s(x, y) = 4|y| \), then the total charge (in \( \mu \)C, rounded off to the nearest integer) on the sheet is _________.
- GATE EC - 2025
- Networks, Signals and Systems
- Transistors
- The electron mobility \( \mu_n \) in a non-degenerate germanium semiconductor at 300 K is 0.38 m$^2$/Vs. The electron diffusivity \( D_n \) at 300 K (in cm$^2$/s, rounded off to the nearest integer) is _________.
- GATE EC - 2025
- Networks, Signals and Systems
- Transistors
In the circuit shown, the identical transistors Q1 and Q2 are biased in the active region with \( \beta = 120 \). The Zener diode is in the breakdown region with \( V_Z = 5 \, V \) and \( I_Z = 25 \, mA \). If \( I_L = 12 \, mA \) and \( V_{EB1} = V_{EB2} = 0.7 \, V \), then the values of \( R_1 \) and \( R_2 \) (in \( k\Omega \), rounded off to one decimal place) are _________, respectively.
- GATE EC - 2025
- Networks, Signals and Systems
- Transistors
- In an n-p-n common emitter (CE) transistor the collector current changes from 5 m A to 16 mA for the change in base current from 100 μ A and 200 μA , respectively. The current gain of transistor is Options 1. 110 2. 0.9 3. 210 4. 9
- JEE Main - 2023
- Physics
- Transistors
- Want to practice more? Try solving extra ecology questions todayView All Questions