Question:medium
A semiconductor X is made by doping a germanium crystal with indium \((Z = 49)\). A second semiconductor Y is made by doping germanium crystal with arsenic \((Z = 33)\). Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?
A semiconductor X is made by doping a germanium crystal with indium \((Z = 49)\). A second semiconductor Y is made by doping germanium crystal with arsenic \((Z = 33)\). Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?
Show Hint
Current gain is the ratio of collector to base current change, and voltage gain is beta times load over input resistance.
Updated On: Oct 1, 2026
- X is p-type, Y is n-type and the junction is forward biased.
- X is p-type, Y is n-type and the junction is reverse biased.
- X is n-type, Y is p-type and the junction is forward biased.
- X is n-type, Y is p-type and the junction is reverse biased.
Show Solution
The Correct Option is A
Solution and Explanation
Step 1: Voltage gain from ratios:
$\frac{A_v}{\beta} = \frac{R_L}{R_i}$, so $\frac{R_L}{R_i} = \frac{75}{25} = 3$.
Step 2: Load:
$R_L = 3\times2\text{ k}\Omega = 6\text{ k}\Omega$ (D).
Final Answer:
6 k ohm. \[ \boxed{6\text{ k}\Omega} \]
$\frac{A_v}{\beta} = \frac{R_L}{R_i}$, so $\frac{R_L}{R_i} = \frac{75}{25} = 3$.
Step 2: Load:
$R_L = 3\times2\text{ k}\Omega = 6\text{ k}\Omega$ (D).
Final Answer:
6 k ohm. \[ \boxed{6\text{ k}\Omega} \]
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