List of top Material Science and Technology Questions on Nanotechnology asked in CUET (PG)

Match List-I with List-II

List-I	Semiconductor Type	List-II	Fermi Level Position
A	\(p\)-type semiconductor	II	Fermi level near valence band
B	\(n\)-type semiconductor	III	Fermi level near conduction band
C	Intrinsic semiconductor	I	Fermi level near middle of band gap
D	Degenerate semiconductor	IV	Fermi level inside a band

Match List-I with List-II

List-I	Concept	List-II	Expression / Property
A	\(1D\) density of states	III	\(n(E)\propto E^{-1/2}\)
B	\(2D\) density of states	I	Constant
C	\(3D\) density of states	II	\(n(E)\propto E^{1/2}\)
D	Effective mass	IV	\(m^*=\dfrac{\hbar^2}{d^2E/dk^2}\)

Match List-I with List-II

List-I	Concept	List-II	Description
A	Hall effect	IV	Sign and density of charge carriers
B	Fermi-Dirac statistics	III	Free electron gas
C	Phonon	I	Quantum of lattice vibration
D	Work function	II	Energy required to remove electron from metal surface

Match List-I with List-II.

List - I		List - II
A.	Vacancy Defect	I.	Equal number of cations and anions missing
B.	Interstitial Defect	II.	Ion leaves regular site and occupies interstitial site
C.	Schottky Defect	III.	Missing atom from lattice site
D.	Frenkel Defect	IV.	Extra atom at interstitial site

Match List-I with List-II.

List - I		List - II
A.	Diamagnetic Material	I.	Small positive susceptibility
B.	Paramagnetic Material	II.	Negative susceptibility
C.	Ferromagnetic Material	III.	Large positive susceptibility
D.	Antiferromagnetic Material	IV.	Opposite equal magnetic moments

Match List-I with List-II

List-I	Crystal Structure	List-II	Property
A	FCC	III	Packing fraction \(=0.74\)
B	BCC	II	Packing fraction \(=0.68\)
C	Simple cubic	I	Packing fraction \(=0.52\)
D	HCP	IV	Ideal \(c/a = 1.633\)

Match List-I with List-II. List-I:
A. X-ray diffraction,
B. Hall effect,
C. Isothermal expansion,
D. Adiabatic process.

List-II:
I. \(\Delta U=0\) for ideal gas,
II. No heat exchange,
III. Bragg's law,
IV. Carrier concentration and sign.

Match List-I with List-II.

List - I		List - II
A.	Cohesive Energy	I.	Energy required to remove electron from atom
B.	Work Function	II.	Energy required to remove electron from metal surface
C.	Electron Affinity	III.	Energy released when electron is added
D.	Ionization Potential	IV.	Energy required to separate crystal into individual atoms

Match List-I with List-II.

List - I		List - II
A.	Sol-gel Method	I.	Top-down approach
B.	Ball Milling	II.	Thin film by rotation
C.	Chemical Vapour Deposition	III.	Bottom-up wet chemical method
D.	Spin Coating	IV.	Film growth from vapour phase

Match List-I with List-II.

List - I		List - II
A.	Graphene Oxide	I.	Bulk oxide semiconductor
B.	\[ \mathrm{MoS_2} \]	II.	Transition metal dichalcogenide
C.	hBN	III.	Graphene-based 2D material
D.	ZnO	IV.	Hexagonal boron nitride

Match List-I with List-II.

List - I		List - II
A.	Bragg's Law	I.	\[ \frac{K}{\sigma}=LT \]
B.	Dulong-Petit's Law	II.	\[ n\lambda=2d\sin\theta \]
C.	Wiedemann-Franz Law	III.	\[ C_V=3R \]
D.	Curie-Weiss Law	IV.	\[ \chi=\frac{C}{T-\theta} \]

The characteristic length of nano-materials is:

Surface area to volume ratio of materials:

Match the LIST-I with LIST-II

LIST-I (Quantum structures)	LIST-II (Delocalization dimensions)
A. Bulk conductor	I. 0
B. Quantum well	II. 3
C. Quantum wire	III. 1
D. Quantum dot	IV. 2

Choose the correct answer from the options given below:

As the particle size reduces, the optical absorption spectra shifts towards:

Carbon nanotube shows magneto-resistive effects:

Match the LIST-I with LIST-II

LIST-I	LIST-II
A. Field emission	I. detector of gases
B. Chemical sensor	II. strength of plastic composites
C. Mechanical Reinforcement	III. serve as heat sink
D. Computer	IV. flat panel display

Choose the correct answer from the options given below:

Lithography is:

Scanning Tunneling Microscopy is based on:

Which statement is true for Scanning Tunneling Microscopy:

Atomic Force Microscopy is a modified version of:

Atomic Force Microscopy monitors: