List of top Physics Questions on P-N Junction asked in CBSE Class XII

In a reversed-biased p-n junction diode, the applied voltage mostly drops across :
The process named ‘minority carrier injection’ in a p-n junction diode occurs during :

A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. The motion of majority charge carriers causes diffusion current across the junction while the barrier electric field causes motion of minority carriers for drift current. In case of unbiased diode, the diffusion and drift currents are equal. This equilibrium is disturbed by the biasing batteries. Diodes, therefore, allow currents in one direction. This property of diode is used in making rectifiers. 

A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. The motion of majority charge carriers causes diffusion current across the junction while the barrier electric field causes motion of minority carriers for drift current. In case of unbiased diode, the diffusion and drift currents are equal. This equilibrium is disturbed by the biasing batteries. Diodes, therefore, allow currents in one direction. This property of diode is used in making rectifiers. 

Assertion (A): On forward biasing a p-n junction diode, the height of the barrier potential increases. Reason (R): In forward biasing of a p-n junction diode, the direction of the applied voltage is in the same direction as the built-in potential.
Assertion (A): On forward biasing a p-n junction diode, the height of the barrier potential increases. Reason (R): In forward biasing of a p-n junction diode, the direction of the applied voltage is in the same direction as the built-in potential.