List of top Electrical Engineering Questions on Transistors asked in TS PGECET

A silicon diode has a reverse saturation current of \(10^{-12}\text{ A}\) at 300 K. The approximate increase in temperature such that saturation current doubles is

A BJT in CE mode has \(\beta = 120\) and collector current \(I_C = 2.4\text{ mA}\). The small-signal transconductance at room temperature (\(V_T \approx 25\text{ mV}\)) is approximately