Step 1: Understanding the Concept:
Semiconductors like Germanium (Ge) and Silicon (Si) belong to Group 14 of the periodic table, having 4 valence electrons.
Doping is the deliberate introduction of impurities into an intrinsic semiconductor to modulate its electrical properties.
To create a p-type (positive-type) semiconductor, the semiconductor is doped with an element that has fewer valence electrons than the host crystal.
This creates an electron deficiency, commonly referred to as a "hole," which acts as a positive charge carrier.
Step 2: Key Formula or Approach:
To produce a p-type semiconductor, an intrinsic semiconductor (Group 14) must be doped with an element having fewer valence electrons (Group 13) to create electron holes.
Step 3: Detailed Explanation:
Since Germanium belongs to Group 14, an electron-deficient dopant must be chosen from Group 13.
Group 13 elements have only 3 valence electrons.
Common Group 13 dopants include Boron (B), Aluminum (Al), Gallium (Ga), and Indium (In).
Conversely, to create an n-type (negative-type) semiconductor, a dopant with more valence electrons is needed, typically from Group 15 (e.g., Phosphorus (P), Arsenic (As), Antimony (Sb)).
Let's evaluate the given options:
(B) P (Phosphorus) is a Group 15 element. Doping with P creates an n-type semiconductor.
(C) As (Arsenic) is a Group 15 element. Doping with As creates an n-type semiconductor.
(D) Sb (Antimony) is a Group 15 element. Doping with Sb creates an n-type semiconductor.
(A) B (Boron) is a Group 13 element. Doping Germanium with Boron introduces holes, thereby creating a p-type semiconductor.
Step 4: Final Answer:
Boron (B) is the correct dopant to produce a p-type semiconductor.