Understanding the impact of forward biasing on a p-n junction diode is essential. When a diode is subjected to forward bias, the following changes are observed:
- Barrier Height: The applied external voltage in forward bias lowers the inherent potential barrier. This reduction facilitates the passage of charge carriers across the junction.
- Depletion Layer Width: Forward biasing results in a reduction of the depletion layer's width. As the potential barrier diminishes, an increased number of charge carriers can traverse the junction, thereby constricting the depletion region.
Consequently, the accurate conclusion is: Both the barrier height and the depletion layer width are reduced.