Question:easy
The potential barrier in p-n junction diode is due to
The potential barrier in p-n junction diode is due to
Show Hint
Think of the fixed donor and acceptor ions left uncovered on the two sides of the junction after diffusion and recombination.
Updated On: Nov 12, 2026
- depletion of positive charges near the junction.
- accumulation of positive charges near the junction.
- depletion of negative charges near the junction.
- accumulation of positive and negative charges near the junction.
Show Solution
The Correct Option is D
Solution and Explanation
Step 1: Why one-sided options fail
A barrier needs charges of both signs on either side of the junction to produce a field between them. Options (A), (B) and (C) mention only one kind of charge.
Step 2: Pick the option
Option (D) includes both positive and negative charges next to the junction, and this is what sets up the built-in potential.
Step 3: Result
The barrier is due to the fixed ions of both signs near the junction, which is option (D).
Final Answer:
The barrier comes from the build-up of both positive and negative charges, so option (D) is correct. \[ \boxed{\text{(D) }\text{accumulation of positive and negative charges near the junction}} \]
A barrier needs charges of both signs on either side of the junction to produce a field between them. Options (A), (B) and (C) mention only one kind of charge.
Step 2: Pick the option
Option (D) includes both positive and negative charges next to the junction, and this is what sets up the built-in potential.
Step 3: Result
The barrier is due to the fixed ions of both signs near the junction, which is option (D).
Final Answer:
The barrier comes from the build-up of both positive and negative charges, so option (D) is correct. \[ \boxed{\text{(D) }\text{accumulation of positive and negative charges near the junction}} \]
Was this answer helpful?
0
Top Questions on P-N Junction
- Consider the following statements A and B and identify the correct answer:
A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (µA), is due to majority charge carriers.- NEET (UG) - 2024
- Physics
- P-N Junction
- When a potential difference V is applied across a wire of resistance R, it dissipates energy at a rate W. If the wire is cut into two halves and these halves are connected mutually parallel across the same supply, the same supply, the energy dissipation rate will become:
- JEE Main - 2024
- Physics
- P-N Junction
- Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below- JEE Main - 2023
- Physics
- P-N Junction
- In the circuit shown below, maximum Zener diode current will be ________ mA.
- JEE Main - 2022
- Physics
- P-N Junction
- Want to practice more? Try solving extra ecology questions todayView All Questions