Question

The INCORRECT statement is

• A. The lattice structure of Ge is called diamond like structure
• B. The number of electrons in the outermost orbit of Si is 4
• C. The energy band gap of semiconductors is less than 3 eV
• D. The number of free electrons is equal to number of holes in Ge
• E. The energy band gap of Ge is greater than 4 eV

Hint:

Key band gaps to remember at 300K:
Silicon (Si) \(\approx 1.1 \text{ eV}\).
Germanium (Ge) \(\approx 0.7 \text{ eV}\).
Gallium Arsenide (GaAs) \(\approx 1.4 \text{ eV}\).

Answer 1

Answer: (E)