
The V-I characteristics of a diode are categorized into two primary regions:
When the p-side of the diode is connected to the positive battery terminal and the n-side to the negative, it is in forward bias. In this state, current rises exponentially with increasing voltage. Initially, current is minimal, but after reaching the threshold voltage (approximately 0.7 V for silicon diodes), current increases sharply.
In reverse bias, current remains negligible until the reverse breakdown voltage is attained. Beyond this voltage, current increases significantly in the reverse direction. Reverse breakdown occurs when the voltage surpasses a critical limit, enabling reverse conduction through the diode.
A diode is connected in parallel with a resistance as shown in the figure. The most probable current (I)–voltage (V) characteristic is 