Given:
Acceptor level = 50 meV above valence band
1 eV = 1.6 × 10⁻¹⁹ J
h = 6.63 × 10⁻³⁴ J·s
c = 3 × 10⁸ m/s
Energy required to create a hole:
\[ E = 50 \text{ meV} = 50 \times 10^{-3} \times 1.6 \times 10^{-19} \text{ J} \]
\[ E = 8 \times 10^{-21} \text{ J} \]
Maximum wavelength (λₘₐₓ):
\[ \lambda_{max} = \frac{hc}{E} \]
\[ \lambda_{max} = \frac{(6.63 \times 10^{-34})(3 \times 10^8)}{8 \times 10^{-21}} \]
\[ \lambda_{max} = 2.486 \times 10^{-5} \text{ m} \]
\[ \lambda_{max} \approx 2.48 \times 10^{-5} \text{ m} \]
Answer: The maximum wavelength is \(\boxed{2.48 \times 10^{-5} \text{ m}}\) (Option 3)
To determine the maximum wavelength of light capable of creating a hole in a p-type semiconductor, we employ the photon energy-wavelength relationship:
\(E = \frac{hc}{\lambda}\)
where:
Given that the acceptor level is located 50 meV above the valence band, convert this energy from meV to joules:
Rearrange the formula to solve for \(\lambda\):
\(\lambda = \frac{hc}{E} = \frac{6.626 \times 10^{-34} \times 3 \times 10^8}{8.01 \times 10^{-21}}\)
Perform the calculation:
\(\lambda = \frac{19.878 \times 10^{-26}}{8.01 \times 10^{-21}}\)
\(\lambda \approx 2.48 \times 10^{-6} \, \text{m}\)
Therefore, the maximum wavelength of light necessary for hole generation is approximately \(2.48 \times 10^{-5} \, \text{m}\), aligning with one of the provided options.
The correct answer is: \(2.48 \times 10^{-5} \, \text{m}\)

