In a $p-n$ junction diode, change in temperature due to heating
- affects only reverse resistance
- affects only forward resistance
- does not affect resistance of p-n junction
- affects the overall V -I characteristics of p-n junction
The Correct Option is D
Solution and Explanation
To solve the question related to the effect of temperature change on a $p-n$ junction diode, we need to understand how temperature influences the electrical characteristics of semiconductors.
The behavior of a $p-n$ junction diode is described by its V-I (voltage-current) characteristics, which show the relationship between the voltage across the diode and the current through it. This relationship is influenced by temperature changes due to the following reasons:
- Increase in intrinsic carrier concentration: As temperature rises, the intrinsic carrier concentration in the semiconductor increases, which affects both the forward and reverse current in the diode.
- Decrease in barrier potential: With higher temperatures, the barrier potential (built-in voltage) across the diode decreases, making it easier for carriers to cross the junction. This affects both forward and reverse bias conditions.
- Change in reverse saturation current: The reverse saturation current, which is the small current that flows in the reverse bias condition, increases with temperature. This change is exponential and significantly influences the reverse bias characteristics.
- Shift in V-I characteristics: Due to changes in the factors mentioned above, the entire V-I characteristics of the diode shift, influencing the operation of the diode in both forward and reverse bias conditions.
Considering these aspects, we can conclude that the correct answer is:
This option is correct because temperature affects both the forward and reverse bias operations, impacting the diode's overall performance. The other options are incorrect because temperature changes do not exclusively affect either the forward or reverse resistance or leave the resistance unchanged.
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