Question:medium
In a $p-n$ junction diode, change in temperature due to heating
In a $p-n$ junction diode, change in temperature due to heating
Updated On: May 8, 2026
- affects only reverse resistance
- affects only forward resistance
- does not affect resistance of p-n junction
- affects the overall V -I characteristics of p-n junction
Show Solution
The Correct Option is D
Solution and Explanation
To understand how temperature affects a p-n junction diode, we need to consider the characteristics and behavior of the diode under varying temperatures. A p-n junction diode is a semiconductor device that allows current to flow in one direction only. It has two regions: the p-type and n-type semiconductors.
- When the temperature increases, the intrinsic carrier concentration in the semiconductor increases. This is because thermal energy provides enough energy for more electron-hole pairs to be generated.
- The increase in carrier concentration affects both the forward and reverse bias conditions of the diode:
- Forward Bias: In forward bias, the increase in temperature decreases the forward resistance. This is because the increase in carrier concentration facilitates more current to flow for a given voltage.
- Reverse Bias: In reverse bias, the reverse saturation current increases with temperature. This happens because more thermally generated carriers are available to carry the current.
- Due to these changes, both forward and reverse characteristics of the diode are affected by temperature. This results in a shift in the V-I characteristics of the diode.
Based on this understanding, the correct answer is: affects the overall V-I characteristics of the p-n junction.
Other options can be ruled out because:
- Affects only reverse resistance: This is incorrect because temperature affects both forward and reverse characteristics, not just reverse resistance.
- Affects only forward resistance: This is also incorrect as the reverse bias current is affected with temperature changes.
- Does not affect resistance of p-n junction: This is incorrect since temperature changes do affect both forward and reverse resistances.
Was this answer helpful?
0
Top Questions on Semiconductor electronics: materials, devices and simple circuits
- What is the output of a NAND gate when both inputs are HIGH?
- MHT CET - 2024
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- The reverse saturation current (I0) of a silicon diode at 27°C is \( 10^{-6} \) A. What will be the approximate value of I0 at 67°C? (Assume \( I_0 \) doubles for every 10°C rise in temperature)
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a p-n junction diode, what happens to the width of the depletion region when the forward bias is increased?
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a silicon semiconductor at room temperature, the intrinsic carrier concentration is \( 1.5 \times 10^{16} \, \text{m}^{-3} \). Calculate the energy band gap of the silicon if the intrinsic carrier concentration is given by: \[ n_i = \sqrt{N_c N_v} e^{-E_g / 2kT} \] Where: - \( N_c = 2.8 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the conduction band, - \( N_v = 1.04 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the valence band, - \( k = 1.38 \times 10^{-23} \, \text{J/K} \) is the Boltzmann constant, - \( T = 300 \, \text{K} \) is the temperature.
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- Want to practice more? Try solving extra ecology questions todayView All Questions
