Doping germanium (Ge), a group-IV element, with arsenic (As), a group-V element, results in an $n$-type semiconductor. Arsenic, possessing five valence electrons, provides excess electrons (conduction electrons) to germanium, which has four. These surplus electrons are then available for electrical conduction, thereby augmenting the concentration of conduction electrons.Consequently, doping Ge with As achieves the following outcome:\[\boxed{\text{an increase in the number of conduction electrons}}\]