The Hall Effect occurs when a magnetic field, applied perpendicularly to current flow in a conductor (or semiconductor), generates a voltage (Hall voltage) perpendicular to both. Hall voltage ($V_H$) relates to the magnetic field ($B$), current ($I$), charge carrier density ($n$), and material thickness ($t$) via the equation:
\(V_H = \frac{IB}{net}\)
Here, $e$ is the elementary charge.
This experiment yields two key parameters:
Charge Carrier Concentration ($n$): Measuring the Hall voltage with other known parameters determines the density of charge carriers (electrons or holes).
Mobility ($\mu$): Calculated from Hall voltage and conductivity, mobility describes charge carrier speed in an electric field and relates to their scattering rate.
The Hall Effect also identifies the sign of charge carriers, as Hall voltage polarity distinguishes electrons from holes. Thus, the Hall experiment measures charge carrier concentration, mobility, and carrier type.