Question:medium
Following truth table represent which logic gate -
A B C 1 1 0 0 1 1 1 0 1 0 0 1
Following truth table represent which logic gate -
| A | B | C |
| 1 | 1 | 0 |
| 0 | 1 | 1 |
| 1 | 0 | 1 |
| 0 | 0 | 1 |
Updated On: May 1, 2026
XOR
NOT
NAND
AND
Show Solution
The Correct Option is C
Solution and Explanation
The given truth table corresponds to a specific logic gate. Let's analyze the truth table to identify which logic gate it represents:
| A | B | C |
|---|---|---|
| 1 | 1 | 0 |
| 0 | 1 | 1 |
| 1 | 0 | 1 |
| 0 | 0 | 1 |
To identify the logic gate, let's evaluate the behavior exhibited by columns A, B, and the corresponding output C:
- When both inputs A and B are 1, the output C is 0.
- In all other cases (when at least one of the inputs A or B is 0), the output C is 1.
This behavior is characteristic of the NAND gate, which outputs 0 only when all inputs are 1. For any other combination of inputs, the output is 1.
Now, let's rule out the other options:
- XOR: Produces a true output (1) only when the inputs differ. The table does not match this behavior.
- NOT: Has only one input and inverts the input. Our table has two inputs.
- AND: Produces a true output (1) only when all inputs are true. This does not match our truth table because our table gives an output of 0 when both inputs are 1.
Hence, the correct answer is that the given truth table represents a NAND gate.
Was this answer helpful?
0
Top Questions on Semiconductor electronics: materials, devices and simple circuits
- What is the output of a NAND gate when both inputs are HIGH?
- MHT CET - 2024
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- The reverse saturation current (I0) of a silicon diode at 27°C is \( 10^{-6} \) A. What will be the approximate value of I0 at 67°C? (Assume \( I_0 \) doubles for every 10°C rise in temperature)
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a p-n junction diode, what happens to the width of the depletion region when the forward bias is increased?
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a silicon semiconductor at room temperature, the intrinsic carrier concentration is \( 1.5 \times 10^{16} \, \text{m}^{-3} \). Calculate the energy band gap of the silicon if the intrinsic carrier concentration is given by: \[ n_i = \sqrt{N_c N_v} e^{-E_g / 2kT} \] Where: - \( N_c = 2.8 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the conduction band, - \( N_v = 1.04 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the valence band, - \( k = 1.38 \times 10^{-23} \, \text{J/K} \) is the Boltzmann constant, - \( T = 300 \, \text{K} \) is the temperature.
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- Want to practice more? Try solving extra ecology questions todayView All Questions
