Question

Consider the following statements (A) and (B) and identify the correct answer. 
(A) A zener diode is connected in reverse bias when used as a voltage regulator. 
(B) The potential barrier of the p-n junction lies between 0.1 V to 0.3 V.

• (A) is incorrect but (B) is correct
• (A) and (B) both are correct
• (A) and (B) both are incorrect
• (A) is correct and (B) is incorrect

Answer 1

The Correct Option is D

To determine the correctness of the given statements (A) and (B), let's analyze each one: 

1. Statement (A): "A Zener diode is connected in reverse bias when used as a voltage regulator."

Explanation: A Zener diode is specifically designed to operate in the reverse breakdown region. When used as a voltage regulator, it is indeed connected in reverse bias. This allows it to maintain a constant output voltage despite changes in the input voltage or load current. Thus, statement (A) is correct.

1. Statement (B): "The potential barrier of the p-n junction lies between 0.1 V to 0.3 V."

Explanation: The typical potential barrier of a silicon p-n junction is around 0.7 V, and for a germanium p-n junction, it is approximately 0.3 V. Therefore, the range mentioned in statement (B) is generally incorrect for standard silicon and germanium diodes, as it is not applicable to either the typical silicon or germanium junctions specifically. Hence, statement (B) is incorrect.

Conclusion: Based on the above explanations, the correct answer is that statement (A) is correct, and statement (B) is incorrect.