Question:medium
Choose the correct statement
Choose the correct statement
Show Hint
Forward Bias \(\rightarrow\) Barrier Height Reduces \(\rightarrow\) Current Increases.
Reverse Bias \(\rightarrow\) Barrier Height Increases \(\rightarrow\) Current Decreases.
Reverse Bias \(\rightarrow\) Barrier Height Increases \(\rightarrow\) Current Decreases.
Updated On: Jun 24, 2026
- An intrinsic semiconductor has trivalent or pentavalent impurities.
- Pure Ge or Si is an extrinsic semiconductor.
- The conductivity of a semiconductor can be increased by reducing its temperature.
- A rectifier circuit does not use p-n junction diodes.
- The potential barrier in a forward biased p-n junction gets reduced
Show Solution
The Correct Option is
Solution and Explanation
Was this answer helpful?
0
Top Questions on Semiconductor electronics: materials, devices and simple circuits
- What is the output of a NAND gate when both inputs are HIGH?
- MHT CET - 2024
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- The reverse saturation current (I0) of a silicon diode at 27°C is \( 10^{-6} \) A. What will be the approximate value of I0 at 67°C? (Assume \( I_0 \) doubles for every 10°C rise in temperature)
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a p-n junction diode, what happens to the width of the depletion region when the forward bias is increased?
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a silicon semiconductor at room temperature, the intrinsic carrier concentration is \( 1.5 \times 10^{16} \, \text{m}^{-3} \). Calculate the energy band gap of the silicon if the intrinsic carrier concentration is given by: \[ n_i = \sqrt{N_c N_v} e^{-E_g / 2kT} \] Where: - \( N_c = 2.8 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the conduction band, - \( N_v = 1.04 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the valence band, - \( k = 1.38 \times 10^{-23} \, \text{J/K} \) is the Boltzmann constant, - \( T = 300 \, \text{K} \) is the temperature.
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- Want to practice more? Try solving extra ecology questions todayView All Questions
