Given the amplitude modulated signal:
s(t) = A cos(400πt) + B cos(360πt) + B cos(440πt).
The carrier power Pc equals 50 Watts.
Since power is given by P = (A2/2R) and R = 1 Ω, Pc = A2/2.
Therefore, A2/2 = 50, so A = √(100) = 10 Volts.
The total sideband power to carrier power ratio is 1/9. Let Psb be the total sideband power.
Thus: Psb/Ptotal = 1/9.
We know Ptotal = Pc + Psb, thus Psb/ (50 + Psb) = 1/9.
Let x = Psb, solving gives: x/(50 + x) = 1/9. Multiplying both sides by 9(50+x) leads to:
9x = 50 + x => 8x = 50 => x = 6.25 Watts.
The power of each sideband component (360π, 440π) is B2/2, hence 2(B2/2) = 6.25.
So, B2 = 6.25, B = √6.25 = 2.5.
In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal transconductance of the transistor is \(g_m\). Neglect body effect, channel length modulation, and intrinsic device capacitances. The small signal input impedance \(Z_{in}(j\omega)\) is:
