The provided ratio is: \[ \frac{\text{Dopant Atoms}}{\text{Silicon Atoms}} = \frac{1}{5 \times 10^7} \]
Using the silicon atom density \( 5 \times 10^{28} \) atoms/m\(^3\), the dopant concentration per cubic metre is: \[ \text{Dopant Atoms/m}^3 = \left( \frac{1}{5 \times 10^7} \right) \times (5 \times 10^{28} \, \text{atoms/m}^3) = 10^{21} \, \text{dopant atoms/m}^3 \]
Each dopant atom introduces one hole. Therefore, the hole density per cubic metre equals the dopant atom density: \[ \text{Holes/m}^3 = 10^{21} \, \text{holes/m}^3 \]
With \( 1 \, \text{m}^3 = 10^6 \, \text{cm}^3 \), the hole density per cubic centimetre is: \[ \text{Holes/cm}^3 = \frac{10^{21} \, \text{holes/m}^3}{10^6 \, \text{cm}^3/\text{m}^3} = 10^{15} \, \text{holes/cm}^3 \]
A common dopant for creating p-type silicon is boron (B). Boron possesses one fewer valence electron than silicon. When a boron atom replaces a silicon atom in the crystal lattice, it creates a deficiency in electrons, manifesting as a hole.
The calculated hole concentration per cubic centimetre due to doping in the silicon specimen is \( \boxed{10^{15}} \, \text{holes/cm}^3 \).