List of top Electromagnetics Questions on Characteristic impedance asked in GATE EC

A satellite attitude control system, as shown below, has a plant with transfer function: $ G(s) = \frac{1}{s^2}, $ cascaded with a compensator: $ C(s) = \frac{K(s + \alpha)}{s + 4}, $ where $ K $ and $ \alpha $ are positive real constants. In order for the closed-loop system to have poles at $ -1 \pm j\sqrt{3} $, the value of $ \alpha $ must be $\_\_\_\_\_$.

A 4-bit priority encoder has inputs $ D_3, D_2, D_1, $ and $ D_0 $ in descending order of priority. The two-bit output $ AB $ is generated as 00, 01, 10, and 11 corresponding to inputs $ D_3, D_2, D_1, $ and $ D_0 $, respectively. The Boolean expression of the output bit $ B $ is $\_\_\_\_$.

The information bit sequence $\{1 \, 1 \, 1 \, 0 \, 1 \, 0 \, 1 \, 0 \, 1\}$ is to be transmitted by encoding with Cyclic Redundancy Check 4 (CRC-4) code, for which the generator polynomial is $C(x) = x^4 + x + 1$. The encoded sequence of bits is $\_\_\_\_$.

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?

In the circuit given below, the switch S was kept open for a sufficiently long time and is closed at time t=0. The time constant (in seconds) of the circuit for t>0 is___.

In the circuit given below, the switch $S$ was kept open for a sufficiently long time and is closed at time $t = 0$. The time constant (in seconds) of the circuit for $t>0$ is $\_\_\_\_$.

Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of $100 \, {nm}$, a fixed positive oxide charge of $10^{-8} \, {C/cm}^2$ at the oxide-silicon interface, and a metal work function of $4.6 \, {eV}$. Assume that the relative permittivity of the oxide is $4$, and the absolute permittivity of free space is $8.85 \times 10^{-14} \, {F/cm}$. If the flatband voltage is $0 \, {V}$, the work function of the p-type silicon (in eV, rounded off to two decimal places) is $\_\_\_\_$.

The photocurrent of a PN junction diode solar cell is $1 \, {mA}$. The voltage corresponding to its maximum power point is $0.3 \, {V}$. If the thermal voltage is $30 \, {mV}$, the reverse saturation current of the diode (in ${nA}$, rounded off to two decimal places) is $\_\_\_\_$.