List of top Geophysics Questions on Electronics asked in CUET (PG)

A Negative feedback:

Given below are two statements:
Assertion (A): FETs are in general more suitable than BJTs particularly at low frequencies.
Reason (R): The reason of more suitability of FETs than BJTs at low frequencies is their high input resistance and high power gain.

Calculate ripple factor in the following at \(50\ \text{Hz}\):
A. \(\pi\) section filter having \(C_1=200\ \mu F,\ C_2=100\ \mu F,\ L_1=50\ mH,\ R_L=100\ \Omega\),
B. \(\pi\) section filter having \(C_1=200\ \mu F,\ C_2=200\ \mu F,\ L_1=50\ mH,\ R_L=100\ \Omega\),
C. \(\pi\) section filter having \(C_1=200\ \mu F,\ C_2=200\ \mu F,\ L_1=100\ mH,\ R_L=100\ \Omega\),
D. \(\pi\) section filter having \(C_1=100\ \mu F,\ C_2=400\ \mu F,\ L_1=100\ mH,\ R_L=200\ \Omega\). Choose the correct answer from the options given below:

An a. c. supply of 220V is applied to a half wave rectifier through a transformer of turn ratio 20:1. In this circuit the peak inverse voltage is:

Match List-I with List-II

\[ \begin{array}{|l|l|} \hline \textbf{List-I} & \textbf{List-II} \\ \hline (A) \; \text{Zener diode} & (I) \; \text{Negative resistance region} \\ (B) \; \text{Tunnel diode} & (II) \; \text{Voltage regulator} \\ (C) \; \text{Rectifier} & (III) \; \text{Pulsating d.c.} \\ (D) \; \text{Light emitting diode} & (IV) \; \text{Gallium Arsenide phosphide (GaAsP)} \\ \hline \end{array} \]
Choose the correct answer from the options given below:

In common emitter connection, the collector leakage current in a transistor is 300\(\mu\)A. The leakage current in the transistor in common base arrangement will be (Given \(\beta\) = 130):

A power gain of 100 in decibel (db) is: