List of top Electronics and Communication Engineering Questions on Electronic devices asked in CUET (PG)

Arrange the following phenomena in the order they occur to create drift current:
A. An electric field is applied
B. Free carriers exist
C. Carriers accelerate and scatter
D. Net drift current is established

Match List-I with List-II (Devices vs Applications).

Match List-I with List-II (Semiconductor types vs position of Fermi level).

Consider the following statements: A. The intrinsic concentration of carriers is independent of temperature B. Current due to carrier drift occurs in both semiconductor and metals C. Current due to carrier diffusion exists in both semiconductor and metals D. Metals are unipolar while semiconductors have bipolar nature

Assertion (A): Gallium arsenide is a direct band semiconductor having faster switching capabilities and high temperature operating capabilities. Reason (R): A substance for which the forbidden energy region is relatively small is called a semiconductor.

What is the CMRR (Common Mode Rejection Ratio) of an ideal Operational Amplifier?

A MOSFET operates in the saturation region when the gate-to-source voltage exceeds what?

In a Common Emitter (CE) configuration, what is the phase shift between input and output?

Which type of power amplifier has the highest theoretical efficiency?

Which semiconductor device is primarily used as a voltage regulator?